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| FDD3670 June 2001 FDD3670 100V N-Channel PowerTrench(R) MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features * 34 A, 100 V. RDS(ON) = 32 m @ V GS = 10 V RDS(ON) = 35 m @ V GS = 6 V * Low gate charge (57 nC typical) * Fast switching speed * High performance trench technology for extremely low RDS(ON) * High power and current handling capability D G S TO-252 D G S Absolute Maximum Ratings Symbol V DSS V GSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current - Continuous - Pulsed TA=25oC unless otherwise noted Parameter Ratings 100 (Note 1) Units V V A W 20 34 100 83 3.8 1.6 -55 to +175 Maximum Power Dissipation @ TC = 25C @ TA = 25C (Note 1) (Note 1a) TJ , TSTG @ TA = 25C (Note 1b) Operating and Storage Junction Temperature Range C Thermal Characteristics RJ C RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (Note 1) (Note 1b) 1.8 96 C/W C/W Package Marking and Ordering Information Device Marking FDD3670 Device FDD3670 Reel Size 13'' Tape width 16mm Quantity 2500 units (c)2001 Fairchild Semiconductor Corporation FDD3670 Rev C(W) FDD3670 Electrical Characteristics Symbol WDSS IAR TA = 25C unless otherwise noted Parameter (Note 2) Test Conditions V DD = 50 V, ID = 7.3 A Min Typ Max Units 360 7.3 mJ A Drain-Source Avalanche Ratings Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse (Note 2) Off Characteristics BV DSS BVDSS TJ IDSS IGSSF IGSSR V GS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C V DS = 80 V, V GS = 20 V, V GS = 0 V V DS = 0 V 100 92 10 100 -100 V mV/C A nA nA V GS = -20 V, V DS = 0 V V DS = V GS , ID = 250 A ID = 250 A, Referenced to 25C V GS V GS V GS V GS = 10 V, ID = 7.3 A = 10 V, ID = 7.3 A, TJ = 125C = 6 V, ID = 7.0 A = 10 V, V DS = 5 V ID = 7.3 A On Characteristics V GS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) 2 2.5 -7.2 22 39 24 4 V mV/C 32 56 35 m ID(on) gFS Ciss Coss Crss 25 15 31 2490 265 80 A S pF pF pF V DS = 5 V, Dynamic Characteristics V DS = 50 V, f = 1.0 MHz V GS = 0 V, Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 50 V, V GS = 10 V, ID = 1 A, RGEN = 6 16 10 56 25 26 18 84 40 80 ns ns ns ns nC nC nC V DS = 50 V, V GS = 10 V ID = 7.3 A, 57 11 15 Drain-Source Diode Characteristics and Maximum Ratings IS V SD Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward V GS = 0 V, IS = 2.7 A Voltage 2.7 (Note 2) A V 0.72 1.2 a) RJA= 40oC/W when mounted on a 1in2 pad of 2oz copper. Scale 1 : 1 on letter size paper Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% b) RJA= 96oC/W on a minimum mounting pad. FDD3670 Rev C(W) FDD3670 Typical Characteristics 60 RDS(ON) NORMALIZED , DRAIN-SOURCE ON-RESISTANCE V GS = 10V 50 ID, DRAIN CURRENT (A) 5.5V 5.0V 4.5V 2 1.8 1.6 V GS = 4.0V 1.4 4.5V 1.2 1 5.0V 40 30 4.0V 20 5.5V 7.0V 10V 10 3.5V 0 0 1 2 3 4 5 V DS, DRAIN-SOURCE VOLTAGE (V) 0.8 0 10 20 30 40 50 60 ID , DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.06 2.4 RDS(ON) NORMALIZED , DRAIN-SOURCE ON-RESISTANCE 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 175 T J, JUNCTION TEMPERATURE ( oC) ID = 7.3A V GS = 10V ID = 3.7A RDS(ON) ON-RESISTANCE ( ) , 0.05 T A = 125o C 0.04 0.03 0.02 T A = 25o C 0.01 0 3 4 5 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 60 IS, REVERSE DRAIN CURRENT (A) V DS = 5V 50 ID, DRAIN CURRENT (A) Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VGS = 0V 10 1 0.1 T A = 125o C 25o C -55o C 0.01 0.001 0.0001 40 30 125o C 20 25o C 10 T A = -55oC 0 2 3 4 5 6 V GS, GATE TO SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 1.2 V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDD3670 Rev C(W) FDD3670 Typical Characteristics 10 ID = 7.3A VGS, GATE-SOURCE VOLTAGE (V) 8 VDS = 20V 80V 6 50V 4500 4000 3500 CAPACITANCE (pF) 3000 2500 2000 1500 1000 500 COSS C RSS CISS f = 1MHz V GS = 0 V 4 2 0 0 10 20 30 40 50 60 Qg, GATE CHARGE (nC) 0 0 20 40 60 80 100 V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 1000 P(pk), PEAK TRANSIENT POWER (W) 40 Figure 8. Capacitance Characteristics. 100 ID, DRAIN CURRENT (A) RDS(ON) LIMIT 10 100s 1ms 10ms 100ms 1s 1 V GS = 10V SINGLE PULSE 0.1 RJA = 96o C/W TA = 25oC 0.01 0.1 1 10 100 1000 V DS, DRAIN-SOURCE VOLTAGE (V) 10s DC SINGLE PULSE R JA = 96C/W T A = 25C 30 20 10 0 0.1 1 10 t1 , TIME (sec) 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 RJA(t) = r(t) + RJA RJA = 96 C/W P(pk) t1 t2 0.01 0.001 SINGLE PULSE TJ - TA = P * R JA(t) Duty Cycle, D = t1 / t2 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDD3670 Rev C(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM DISCLAIMER FAST FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET VCXTM STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H3 |
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